Nanoscale Materials Science for Future Spintronics

Spintronic functionalization of nanoscale hybrid structures based on atomic layer materials

    Spin-related properties are studied for nanoscale hybrid structures of atomic layer materials, including graphene, and heavy elements. We aim at establishing new principles and technological bases for spintronic functionalization of atomic layer materials by designing hybrid structures with heavy elements. Our cutting-edge spectroscopy techniques due to ultra-slow muon, positron, synchrotron radiation light, spin-polarized atomic beam and neutron allow our group to explore and tailor crystal structures, spin-resolved electronic states as well as dynamics of spin in hybrid materials over nanometer scales. Our study leads to development of spintronic devices with extremely-high energy efficiency and superior radiation resistance.


Materials research by muon.

    By using muon, static or dynamic properties of materials are studied. Materials characterization continuously from near surface to bulk and interface with nm-scale depth resolution can be realized by ultra slow muon and we are investigating spin, electronic, and hydrogen states in advanced materials with muon.


    Surface nano-structure research by positron beam.

      Total-reflection high-energy positron diffraction (TRHEPD) is a surface-sensitive tool owing to the total reflection of positrons, antiparticles of electrons. By making the full use of surface-sensitivity of TRHEPD, we are investigating structure and properties of a two-dimensional atomic sheet such as graphene and silicene.


      Materials research by neutron scattering.

        Neutron interacts with elementary excitations such as phonon and magnon as a matter wave in materials. At any scattering event, energy and momentum are preserved. Dynamics of elementary excitations can be obtained as a dispersion in E-Q space by studying neutron before and after the scattering. Spin excitation studied by inelastic neutron scattering measurement is shown in the figure.